CHIP AND BEAM LEAD MICROWAVE MIXER AND DETECTOR
DIODES
*
SCHOTTKY BARRIER AS AN ACTIVE ELEMENT * LOW NOISE
FIGURE * HIGH
REPRODUCIBILITY OF I-V CHARACTERISTIC * HIGH
RELIABILITY PROVIDED WITH CONSTRUCTION OF ACTIVE ELEMENT
* POSSIBILITY
TO USE SOLDERING WHEN MOUNTING THE DIODES
1. GENERAL INFORMATION
Type
Package
style
Mass,
g, no more than
3A138A-3-V-3
023(8)
0,001
3A142A-5
FIZ.362.053
GH
0,01
4A142A-5
FIZ
3.362.051 GH
0,01
3A143AS-3-VS-3
FIZ.362.055
GH
0,002
3A149A-3
KYaLU.432132.001
GH
0,001
3A149B-3
KYaLU.432132.001GH
0,001
2. SPECIFICATIONS (T=25±10°Ñ)
foper
- maximum
operating frequency, GHz
Cj
- junction
capacitance (U=0 V), pF
UR
- reverse
DC voltage (IR=100 µA
for 4A142, IR=10 µA
for other types of diodes), V
rs
- series
resistance (IF=10 mA), Om
n
- ideality
factor
UF
- forward
DC voltage (IF=1 mA for 3A138,
3A143, IF=100 µA for
3A142, 4A142), V
UF
- difference
of forward DC voltage in pair (IF=1
mA), mV
PD.max
- maximum
continuous power dissipation, mW
PD.M.max
- maximum
pulsed microwave power dissipation ( tp<=
0,3 µs, f <=1000 Hz), mW
IF
max
- pulse
forward current, mA
Type
n
Cj
rs
foper
UR
UF
UF
PD.max
PD.M.max
IF
max
max
max
max
min
min
max
3A138A-3
1,2
0,025
8
1400
3
0,7
-
20
20
-
3A138B-3
1,2
0,012
10
1800
3
0,7
-
15
15
-
3A138V-3
1,2
0,007
12
2800
3
0,7
-
10
10
-
3A142A-5
1,25
0,006
15
4500
3
1,0
-
5
-
5
4A142A-5
1,3
0,008
20
1500
3
0,5
-
3
-
5
3A143AS-5
1,25
0,025
8
1400
3
0,8
15
30
140
-
3A143BS-5
1,25
0,015
10
1800
3
0,8
15
20
90
-
3A143VS-5
1,25
0,01
12
2600
3
0,9
15
15
60
-
3A149A-3
1,15
0,1
6
1÷40
12
0,65
-
100
600
-
3A149B-3
1,15
0,07
8
1÷40
12
0,65
-
100
600
-
3. MAXIMUM RATINGS
1.
Maximum operating temperature for the 3A142, 4A142 diodes
does not exceed +85°Ñ, for the 3A138, 3A143 diodes
- +125°Ñ. Minimal operating temperature for the diodes
3A142, 4A142 diodes is minus 196°C, for the 3A138,
3A143 diodes - -60°C. Operating temperature range
is allowed to vary from -60 to +125°Ñ (3A138, 3A143)
and from -196 to +125°Ñ (3A142, 4A142). 2.
Minimum operation life for 3A142, 4A142 diodes - 15 000
hr., for 3A138, 3A143 diodes
- 25 000 hr.
MICROWAVE MIXER AND DETECTOR DIODES
*
LOW NOISE FIGURE * HIGH
REPRODUCIBILITY OF I-V CHARACTERISTIC * SCHOTTKY
BARRIER AS AN ACTIVE ELEMENT * HIGH
RELIABILITY PROVIDED WITH DIODES PACKAGES AND CONSTRUCTION
OF ACTIVE
ELEMENT * POSSIBILITY
TO USE SOLDERING WHEN MOUNTING THE DIODES * IDEAL
CONVERTER FOR SUPERHETERODYNE MICROWAVE RECEIVERS, HIGH
SENSITIVITY
TO THE SIGNALS AT THE LEVEL OF RELICT COSMIC RADIATION
1. GENERAL INFORMATION
Type
Package
style
Mass,
g, no more than
3A121A, AR, AM, AA121A
KD-124
0,06
3A123A, B, AA123A
KD-122
0,01
3A129A, B, AA129A, B
KD-122A
0,002
3A133A, B
KD-122B
0,0015
3A136A, B
KD-122B
0,0015
3A141A
KD-122B
0,0015
2. SPECIFICATIONS (T=25±10°Ñ)
foper
- maximum
operating frequency, GHz
Lc
- conversion
loss, dB, no more
Rout
- output
resistance, Om
BI
- total
current sensitivity, A/W
Fos(av)
- standard
overall average noise figure, dB, no more
Io
- output
rectified current, mA
UF
- forward
DC voltage at forward current 10 mA, V
UR
- reverse
voltage at reverse current 10 µA, V
Type
foper
Lc*
Fos(av)*
Rout
*
BI
Io
*
UF
UR
typ
max
typ
max
typ
typ
typ
min
AA121A,
3A121A,AR,AM
40
5,6
8,0
7,2
9,0
200÷600
-
0,77
0,9
10
AA123A,
3A123A
80
4,8
5,5
6,2
7,0
180÷600
1,4
1,2
0,9
6
AA123B,
3A123B
80
5,0
6,0
6,4
7,5
180÷600
1,4
1,2
0,9
6
AA129A,
3A129A
120
5,4
6,5
7,4
8,5
180÷700
2,2
1,78
0,9
5
AA129B,
3A129B
120
6,0
7,5
7,8
9,5
180÷700
3,4
1,78
0,9
5
3A133A
180
7,0
7,5
9,0
9,5
100÷700
2,0
1,8
0,9
5
3A133B
180
7,7
8,5
10,0
10,5
100÷700
2,0
1,6
0,9
5
3A136A
150
4,0
5,5
6,0
7,5
200÷600
3,0
1,35
0,9
5
3A136B
150
3,75
5,0
5,6
6,5
200÷600
3,0
1,35
0,9
5
3A141A
178,8
6,0
7,5
8,5
9,5
130÷500
2,8
2,5
0,7**
6,4
*)
Parameters are normalised at wavelength of 8 mm, microwave
power of 2 mW and load resistance by DC current of 100
Om, for AA129 - at wavelength of 3,16 mm, microwave power
of 3,5 mW, for 3A133 - at wavelength of 2,14 mm, microwave
power of 5,0 mW **)
IF= 1 mA
3. MAXIMUM RATINGS
1.
Maximum operating temperature for the diodes does not
exceed +85°Ñ (for 3A136, 3A141 diodes - +125°Ñ).
Operating temperature range is allowed to vary from -60
to +85°Ñ (for AA121 diodes - from -60 to +100°Ñ,
for 3A136, 3A141 diodes - from -60 to +125°Ñ).
UF
