The
semiconductor pulsed avalanche diodes are designed for
generating of nanosecond current pulses with subnanosecond
fronts and for operation as high-speed electronic switch.
Diodes AA742 and AD530 are switched from close to open
state electrically, and AA801 electrically and optically.
1.
GENERAL INFORMATION
Type
Package
style
Mass,
g, no more than
AA742A,
B
FIZ.362.033GH
1,0
AD530A,
B
KD-104
0,15
3A801A-6
FIZ.362.040GH
0,01
2. SPECIFICATIONS (Т=25±10°С
)
Symbols: •
UBr
- break-down voltage, V •
Ures
- residual voltage at current of 6 mA (AA801A-6), 100
mA (AD530), 2-7 A (AA742), V •
tsw
- switching time, ns •
E
- optical control energy, J •
IR
- DC reverse current at reverse voltage UR=35
V, µA •
trec
- recovery time of reverse resistance at bias current
IR=12 mA, µs •
Ctot
- total diode capacitance, pF •
IFM
- maximum allowed pulse current in open state, A
Type
UBr
Ures
tsw
IR
trec
E
Ctot
IFM
min
max
max
max
max
max
max
typical
AA742A
350
590
0,3·UBr
0,6
–
–
–
1,4
30
(at Q=3·е5, t=15 ns)
50 (при Q=1·е6, t=100 ns)
AA742B
500
740
0,3·UBr
0,6
–
–
–
1,4
30
(at Q=3·е5, t =15 ns)
50 (при Q=1·е6, t =100 ns)
AD530A
100
180
0,2·UBr
0,5
1,0
3,0
–
1,0
15
(at Q>1·е3, t<2,5 ns)
AD530B
150
210
0,2·UBr
0,5
1,0
3,0
–
1,0
15
(at Q>1·е3, t<2,5 ns)
3A801A-6
50
210
0,2·UBr
0,2
10,0
200
1·e-9
0,4
2
(at Q>1·е3, t<2,5 ns)
1 (at Q>1·е3, t=100 ns)
3. MAXIMUM RATINGS
1.
Maximum ambient temperature for the diodes does not exceed
+85°С, for AA801 diodes - +70°С. Operat-ing temperature
range is allowed to vary from -60 to + 85°С, for AA801
diodes - from -60 to +70°С. 2.
Minimum operation life for AA742 diodes is 5000 hrs, for
AA801 - 10000 hrs, for AD530 - 25000 hrs at Iav=1,5
mA and Tamb=+85°С and 3000 hrs
at Iav=13,5 mA and Tamb=50°C.
MICROWAVE
DIODES
* SCHOTTKY BARRIER AS AN ACTIVE ELEMENT * HIGH
REPRODUCIBILITY OF I-V CHARACTERISTIC * NO ACCUMULATION
OF MINORITY CARRIERS * MICROWAVE
DIODES FOR HIGH-SPEED PULSED CIRCUITS
1.
GENERAL INFORMATION
Type
Package
style
Mass,
g, no more than
3A529A,
B, AR, BR, AA529A, B
KD-104
0,1
3A530A,
B, AA530A, B
KD-106
0,2
3A538A,
AR, AA538A
KD-122
0,1
3A539A,
AA539A
KDU-17-1
0,1
2. SPECIFICATIONS
(T=25±10 °C)
Symbols:
Ctot
- terminal
capacitance, pF
UF
- forward
DC voltage at forward current 2 mA (AA529, AA538)
and 10 mA (AA530, AA539), V
IR
- reverse
DC current at reverse voltage 5 V (AA529), 9 V (AA538),
20 V (AA539), 30 V (AA530), µA
UR max
- maximum
reverse DC voltage, V
URM max
- maximum
pulsed reverse voltage at tp=10
µsec and Q=100, V
IFM max
- maximum
pulsed forward current at tp=10
µsec and Q=100 (AA529, AA530), tp=0.2
µsec Q=100 (AA538), at tp=10
µsec and Q=1000 (AA539), mA
IF av.max
- maximum
average forward current, mA
IF max
- maximum
DC forward current, mA
Type
Ctot
UF
IR
UR
max
URM
max
IFM
max
IF av.max
IFmax
typ
max
typ
max
3A529A
0.26-0.4
0.83
0.9
0.01
1.0
5
7
5
2
-
3A529B
0.21-0.25
0.85
1.0
0.015
1.0
5
7
5
2
-
3A530A
0.40-1.00
0.85
1.0
0.1
5.0
30
30
50
-
10
3A530B
0.35-0.75
0.9
1.2
0.1
5.0
30
30
50
-
10
3A538A
0.12-0.17
0.85
1.0
0.2
0.75
9
-
20
-
2
3A539A
0.28-0.60
0.85
1.0
0.1
5.0
30
-
50
-
10
Note:
The diodes 3A529A and AA529A, 3A529B and AA529B etc.
have identical characteristics and their test conditions.
3. MAXIMUM RATINGS
Maximum
operating temperature of the diodes does not exceed +85°С.
Operating temperature is allowed to vary from -60 to +85°С.
